2 papers
cond-mat.mtrl-sci2026
Molecular dynamics with a first-principles-validated universal machine-learning potential reveals dynamic elementary processes of growth-related adspecies on GaN(0001)
Yoshito Takaesu, Akira Kusaba, Junko Ishii +2
Atomic-scale understanding of the surface elementary processes in metalorganic vapor phase epitaxy (MOVPE) of GaN has so far relied on static density-functional-theory (DFT) energe…
cond-mat.mtrl-sci2025
Limited Diffusion of Silicon in GaN: A DFT Study Supported by Experimental Evidence
Karol Kawka, Pawel Kempisty, Akira Kusaba +4
Silicon (Si) is the primary donor dopant in gallium nitride (GaN), introduced through epitaxial growth or ion implantation. However, precise control over Si diffusion remains a cri…