1 citations · 1 across the 2 of their papers we have counts for
5 papers
Elemental Germanium Phase-Change Memory
Till Zellweger, Marko MladenoviÄ, Kevin Portner +7
Phase-change memory (PCM) is a mature technology for fast, scalable, non-volatile data storage, with applications spanning embedded memory, as well as in-memory and neuromorphic co…
20 ps Non-Destructive Read and 1 ns Write Operations at <5 V in Ferroelectric HfO2/ZrO2 Non-Volatile Memories
Alexandre Baigol, Ruben Hamming-Green, Paul Uriarte Vicandi +8
Achieving low-voltage, nanosecond multi-level programming and non-destructive read-out of ferroelectric non-volatile memories (NVM) is critical for analog in-memory computing archi…
Multiscale Modeling of Metal/Oxide/Metal Conductive Bridging Random Access Memory Cells: from Ab Initio to Finite Element Calculations
Jan Aeschlimann, Fabian Durch, Christoph Weilenmann +3
We present a multiscale simulation framework to compute the current vs. voltage (I-V ) characteristics of metal/oxide/metal structures building the core of conductive bridging rand…
Conductance-dependent Photoresponse in a Dynamic SrTiO3 Memristor for Biorealistic Computing
Christoph Weilenmann, Hanglin He, Marko MladenoviÄ +6
Modern computers perform pre-defined operations using static memory components, whereas biological systems learn through inherently dynamic, time-dependent processes in synapses an…
Termination-Dependent Resistive Switching in SrTiO Valence Change Memory Cells
Marko MladenoviÄ, Manasa Kaniselvan, Christoph Weilenmann +2
Valence change memory (VCM) cells based on SrTiO (STO), a perovskite oxide, are a promising type of emerging memory device. While the operational principle of most VCM cells re…