most citedElectro-thermal Co-design of Vertical \b{eta}-Ga2O3 Schottky Diodes with High-permittivity BaTiO3 Field-plate for High-field and Thermal Management

3 citations · 3 across the 2 of their papers we have counts for

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2 papers

cond-mat.mtrl-sci2025★ 3 cited

Electro-thermal Co-design of Vertical \b{eta}-Ga2O3 Schottky Diodes with High-permittivity BaTiO3 Field-plate for High-field and Thermal Management

Ahsanul Mohaimeen Audri, Chung-Ping Ho, Emerson J. Hollar +2

This work presents electrothermal co-design of vertical \b{eta}-Ga2O3 Schottky barrier diodes (SBDs) to enhance both heat dissipation and high field management in high-power applic…

eess.SY2025

Over 3 kV and Ultra-Low leakage Vertical (011) \b{eta}-Ga2O3 Power Diodes with Engineered Schottky Contact and High-permittivity Dielectric Field Plate

Emerson J. Hollar, Esmat Farzana

We report over 3 kV breakdown voltage and ultra-low leakage (011) \b{eta}-Ga2O3 power devices utilizing Schottky barrier engineering and high-permittivity (\k{appa}) dielectric (Zr…