activity
20042013
most citedAnalytical description of ballistic spin currents and torques in magnetic tunnel junctions

33 citations · 60 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mes-hall2013★ 33 cited

Analytical description of ballistic spin currents and torques in magnetic tunnel junctions

M. Chshiev, A. Manchon, A. Kalitsov +5

In this work we demonstrate explicit analytical expressions for both charge and spin currents which constitute the 2x2 spinor in magnetic tunnel junctions with noncollinear magneti…

cond-mat.mes-hall2012

Artificial ferroelectricity due to anomalous Hall effect in magnetic tunnel junctions

A. Vedyayev, N. Ryzhanova, N. Strelkov +1

We theoretically investigated Anomalous Hall Effect (AHE) and Spin Hall Effect (SHE) transversally to the insulating spacer O, in magnetic tunnel junctions of the form F/O/F where…

cond-mat.mes-hall2011★ 2 cited

Spin Transfer Torques induced by Spin Hall Effect

A. Vedyayev, N. Strelkov, M. Chshiev +2

Spin accumulation and spin transfer torques induced by Spin Hall Effect in bi-layer structures comprising ferromagnetic and paramagnetic materials are theoretically investigated. T…

cond-mat.mes-hall2010★ 18 cited

Spin-current vortices in current-perpendicular-to-plane nanoconstricted spin-valves

N. Strelkov, A. Vedyayev, N. Ryzhanova +7

The charge and spin diffusion equations taking into account spin-flip and spin-transfer torque were numerically solved using a finite element method in complex non-collinear geomet…

cond-mat.mes-hall2009

The two-bands model of the magnetic tunnel junctions in the Fe/Cr/MgO/Fe structure

A. Vedyaev, N. Ryzhanova, N. Strelkov +3

In this paper we present theoretical studies of spin dependent transport in Fe/Cr/MgO/Fe tunnel junctions with non-collinear alignment of magnetizations of metallic layers comprisi…

cond-mat.other2004★ 7 cited

Diode effect in magnetic tunnel junctions

F. Kanjouri, N. Ryzhanova, B. Dieny +2

The influence on the I-V characteristics and tunnel magnetoresistance (TMR), of impurities embedded into the insulating barrier I separating the two ferromagnetic electrodes F of a…