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cond-mat.mtrl-sci2025
Influence of Bi Alloying on GaAs Valence Band Structure
Joshua J. P. Cooper, Jared W. Mitchell, Shane Smolenski +9
Bi alloying is predicted to transform GaAs from a semiconductor to a topological insulator or semi-metal. To date, studies of the GaAsBi alloy band structure have been…
cond-mat.mtrl-sci2024
Lattice-Matched Multiple Channel AlScN/GaN Heterostructures
Thai-Son Nguyen, Naomi Pieczulewsi, Chandrashekhar Savant +6
AlScN is a new wide bandgap, high-k, ferroelectric material for RF, memory, and power applications. Successful integration of high quality AlScN with GaN in epitaxial layer stacks…