2 papers
cond-mat.mes-hall2016
Influence of strain relaxation in axial (In,Ga)N/GaN nanowire heterostructures on their electronic properties
Oliver Marquardt, Thilo Krause, Vladimir Kaganer +3
We present a systematic study of the influence of elastic strain relaxation on the built-in electrostatic potentials and the electronic properties of axial (In,Ga)N/GaN nanowire he…
cond-mat.mtrl-sci2016
Counterintuitive strain distribution in axial (In,Ga)N/GaN nanowires
Thilo Krause, Michael Hanke, Oliver Brandt +1
We study the three-dimensional deformation field induced by an axial (In,Ga)N segment in a GaN nanowire. Using the finite element method within the framework of linear elasticity t…