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20132021
most citedPerformance Analysis of Strained Monolayer MoS MOSFET

35 citations · 157 across the 10 of their papers we have counts for

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7 papers · 1 filter

cond-mat.mtrl-sci2021★ 8 cited

Lithium adsorption properties of monolayer BSe

Amretashis Sengupta

BSe this work we investigate the Li adsorption properties of a hybrid 2D material, namely monolayer B5Se with first principles calculations. 2 dimensional BSe was found to…

cond-mat.mtrl-sci2018★ 18 cited

Electronic and optical properties of SnX2(X=S, Se)-InSe van der Waals heterostructures from first- principle calculations

Amretashis Sengupta

In this work from first-principles simulations we investigate bilayer van der Waals heterostructures (vdWh) of emerging 2-dimensional (2D) optical materials SnS 2 and SnSe 2 with m…

cond-mat.mtrl-sci2016★ 20 cited

On the junction physics of Schottky contact of (10, 10) MX2 (MoS2, WS2) nanotube and (10, 10) carbon nanotube (CNT): an atomistic study

Amretashis Sengupta

Armchair nanotubes of MoS2 and WS2 offer a sizeable band gap, with the advantage of a one dimensional (1D) electronic material, but free from edge roughness and thermodynamic insta…

cond-mat.mtrl-sci2016★ 8 cited

Atomistic study of electrostatics and carrier transport properties of CNT@MS2 (M= Mo,W) and CNT@BN core-shell nanotubes

Amretashis Sengupta

In this work we present an ab-initio study of electronic properties of 1 dimensional (1D) core-shell nanostructures made of MS2 (MoS2, WS2) or BN armchair nanotube encapsulated car…

cond-mat.mtrl-sci2016

Performance Analysis of uniaxially strained Monolayer Black Phosphorus and Blue Phosphorus n-MOSFET and p-MOSFET

L. Banerjee, A. Mukhopadhyay, A. Sengupta +1

In this work, we present a computational study on the possibility of strain engineering in monolayer Black Phosphorus (black P) and Blue Phosphorus (blue P) based MOSFETs. The mate…

cond-mat.mtrl-sci2014★ 16 cited

Effect of line defects on the electrical transport properties of monolayer MoS sheet

Amretashis Sengupta, Dipankar Saha, Thomas A. Niehaus +1

We present a computational study on the impact of line defects on the electronic properties of monolayer MoS2. Four different kinds of line defects with Mo and S as the bridging at…

cond-mat.mtrl-sci2013

Impact of intrinsic deformations on the negative differential resistance of monolayer MoS ultra-short channel MOSFET

Amretashis Sengupta, Santanu Mahapatra

In this work we present a study on the impact of various intrinsic deformations like ripples, twist, wrap on the electronic properties of ultra-short monolayer MoS2 channels. The e…