747 citations · 5k across the 52 of their papers we have counts for
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Valley splittings in Si/SiGe quantum dots with a germanium spike in the silicon well
Thomas McJunkin, E. R. MacQuarrie, Leah Tom +11
Silicon-germanium heterostructures have successfully hosted quantum dot qubits, but the intrinsic near-degeneracy of the two lowest valley states poses an obstacle to high fidelity…
Spatial Noise Correlations in a Si/SiGe Two-Qubit Device from Bell State Coherences
Jelmer M. Boter, Xiao Xue, Tobias S. Krähenmann +10
We study spatial noise correlations in a Si/SiGe two-qubit device with integrated micromagnets. Our method relies on the concept of decoherence-free subspaces, whereby we measure t…
Signatures of atomic-scale structure in the energy dispersion and coherence of a Si quantum-dot qubit
J. C. Abadillo-Uriel, Brandur Thorgrimsson, Dohun Kim +11
We report anomalous behavior in the energy dispersion of a three-electron double-quantum-dot hybrid qubit and argue that it is caused by atomic-scale disorder at the quantum-well i…
The critical role of substrate disorder in valley splitting in Si quantum wells
Samuel F. Neyens, Ryan H. Foote, Brandur Thorgrimsson +11
Motivated by theoretical predictions that spatially complex concentration modulations of Si and Ge can increase the valley splitting in quantum wells, we grow and characterize Si/S…
A programmable two-qubit quantum processor in silicon
T. F. Watson, S. G. J. Philips, E. Kawakami +9
With qubit measurement and control fidelities above the threshold of fault-tolerance, much attention is moving towards the daunting task of scaling up the number of physical qubits…
Valley dependent anisotropic spin splitting in silicon quantum dots
Rifat Ferdous, Erika Kawakami, Pasquale Scarlino +9
Spin qubits hosted in silicon (Si) quantum dots (QD) are attractive due to their exceptionally long coherence times and compatibility with the silicon transistor platform. To achie…