80 citations · 86 across the 3 of their papers we have counts for
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Si/SiGe quantum dot with superconducting single-electron transistor charge sensor
Mingyun Yuan, Feng Pan, Zhen Yang +6
We report a robust process for fabrication of surface-gated Si/SiGe quantum dots (QDs) with an integrated superconducting single-electron transistor (S-SET) charge sensor. A combin…
Single-electron quantum dot in Si/SiGe with integrated charge-sensing
C. B. Simmons, Madhu Thalakulam, Nakul Shaji +7
Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si…
Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot
Nakul Shaji, C. B. Simmons, Madhu Thalakulam +11
Spin blockade occurs when an electron is unable to access an energetically favorable path through a quantum dot due to spin conservation, resulting in a blockade of the current thr…