activity
20042021
most citedWhy does wurtzite form in nanowires of III-V zinc-blende semiconductors?

739 citations · 1.4k across the 8 of their papers we have counts for

collaborators
Showing cond-mat.mtrl-sciShow all

6 papers · 1 filter

cond-mat.mtrl-sci2021★ 1 cited

Regulated dynamics with two-monolayer steps in vapor-solid-solid growth of nanowires

Edith Bellet-Amalric, Federico Panciera, Gilles Patriarche +5

The growth of ZnTe nanowires and ZnTe-CdTe nanowire heterostructures is studied by \emph{in situ} transmission electron microscopy. We describe the shape, and the change of shape,…

cond-mat.mtrl-sci2019★ 10 cited

Full characterization and modelling of graded interfaces in a high lattice-mismatch axial nanowire heterostructure

D. V. Beznasyuk, P. Stepanov, J. L. Rouvière +4

Controlling the strain level in nanowire heterostructures is critical for obtaining coherent interfaces of high crystalline quality and for the setting of functional properties suc…

cond-mat.mtrl-sci2014★ 1 cited

Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs1-xNx intercalated GaAs/GaAs1-xNx:H heterostructures

Stefano Frabboni, Vincenzo Grillo, Gian Carlo Gazzadi +8

Hydrogen incorporation in diluted nitride semiconductors dramatically modifies the electronic and structural properties of the crystal through the creation of nitrogen-hydrogen com…

cond-mat.mtrl-sci2007★ 739 cited

Why does wurtzite form in nanowires of III-V zinc-blende semiconductors?

F. Glas, J. -C. Harmand, G. Patriarche

We develop a nucleation-based model to explain the formation of the wurtzite (WZ) crystalline phase during the vapor-liquid-solid growth of free-standing nanowires of zinc-blende (…

cond-mat.mtrl-sci2004★ 4 cited

Long-range ordering of III-V semiconductor nanostructures by shallowly buried dislocation networks

Jose Coelho, Gilles Patriarche, Frank Glas +2

We account for lateral orderings of III-V nanostructures resulting from a GaAs/InAs/InGaAs/GaAs sequence grown on GaAs by metallorganic vapour phase epitaxy at two different temper…

cond-mat.mtrl-sci2004★ 8 cited

Buried dislocation networks designed to organize the growth of III-V semiconductor nanostructures

Jose Coelho, Gilles Patriarche, Frank Glas +3

We first report a detailed transmission electron microscopy study of dislocation networks (DNs) formed at shallowly buried interfaces obtained by bonding two GaAs crystals between…