most citedInvestigating Reliability Aspects of Memristor based RRAM with Reference to Write Voltage and Frequency

3 citations · 9 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2016★ 2 cited

Investigating the Temperature Effects on Resistive Random Access Memory (RRAM) Devices

T. D. Dongale, K. V. Khot, S. V. Mohite +8

In this paper, we report the effect of filament radius and filament resistivity on the saturated temperature of ZnO, TiO2, WO3 and HfO2 Resistive Random Access Memory (RRAM) device…

cs.ET2016★ 1 cited

State Space Analysis of Memristor Based Series and Parallel RLCM Circuits

T. D. Dongale, P. K. Gaikwad, R. K. Kamat

The present paper investigates state space analysis of memristor based series and parallel RLCM circuits. The stability analysis is carried out with the help of eigenvalues formula…

cs.ET2016★ 1 cited

A Processing In-Memory Realization Using QCA: Proposal and Implementation

P. P. Chougule, B. Sen, R. Mukherjee +4

Processing in Memory (PIM) is a computing paradigm that promises enormous gain in processing speed by eradicating latencies in the typical von Neumann architecture. It has gained p…

cs.ET2016★ 3 cited

Investigating Reliability Aspects of Memristor based RRAM with Reference to Write Voltage and Frequency

T. D. Dongale, K. V. Khot, S. V. Mohite +8

In this paper, we report the effect of write voltage and frequency on memristor based Resistive Random Access Memory (RRAM). The above said parameters have been investigated on the…

cond-mat.mtrl-sci2016★ 2 cited

TiO2 based Nanostructured Memristor for RRAM and Neuromorphic Applications: A Simulation Approach

T. D. Dongale, P. J. Patil, N. K. Desai +8

We report simulation of nanostructured memristor device using piecewise linear and nonlinear window functions for RRAM and neuromorphic applications. The linear drift model of memr…