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cond-mat.mtrl-sci2016★ 2 cited
Investigating the Temperature Effects on Resistive Random Access Memory (RRAM) Devices
T. D. Dongale, K. V. Khot, S. V. Mohite +8
In this paper, we report the effect of filament radius and filament resistivity on the saturated temperature of ZnO, TiO2, WO3 and HfO2 Resistive Random Access Memory (RRAM) device…
cond-mat.mtrl-sci2016★ 2 cited
TiO2 based Nanostructured Memristor for RRAM and Neuromorphic Applications: A Simulation Approach
T. D. Dongale, P. J. Patil, N. K. Desai +8
We report simulation of nanostructured memristor device using piecewise linear and nonlinear window functions for RRAM and neuromorphic applications. The linear drift model of memr…