Epitaxial growth of diluted magnetic semiconductor Ge1-xCrxTe with high Cr composition

Y. Fukuma, H. Asada, S. Senba +1

IV-VI diluted magnetic semiconductor Ge1-xCrxTe layers up to x=0.1 were grown on SrF2 substrates by molecular beam epitaxy. In site reflection high-energy electron diffraction show…