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researcher

J. Clarkson

8 papers hereh-index 163.1k citations29 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author1
  • middle author6

Across the 7 of 8 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci5
  • cond-mat.mes-hall1
  • cond-mat.str-el1
  • physics.app-ph1
same name
  • J. Clarkson — 5 papers, h 5
  • J. Clarkson — 1 paper, h 11
  • J. Clarkson — 1 paper, h 2

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

activity
20132026
most citedRoom-temperature antiferromagnetic memory resistor

707 citations · 1.1k across the 7 of their papers we have counts for

collaborators
Showing physics.app-phShow all

1 paper · 1 filter

physics.app-ph2017★ 19 cited

Electrically Induced, Non-Volatile, Metal Insulator Transition in a Ferroelectric Gated MoS2​ Transistor

Zhongyuan Lu, Claudy Serrao, Asif I. Khan +4

We demonstrate an electrically induced, non-volatile, metal-insulator phase transition in a MoS2​ transistor. A single crystalline, epitaxially grown, PbZr0.2​Ti0.8​O3​…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.