353 citations · 460 across the 5 of their papers we have counts for
5 papers
GaZn-VZn acceptor complex defect in Ga-doped ZnO
Aihua Tang, Zengxia Mei, Yaonan Hou +5
Identification of complex defect has been a long-sought-after physics problem for controlling the defect population and engineering the useful properties in wide bandgap oxide semi…
Flexible transparent high-voltage diodes for energy management in wearable electronics
Yonghui Zhang, Zengxia Mei, Tao Wang +4
This work reports flexible fully transparent high-voltage diodes that feature high rectification ratio (Rr 10 8) and high breakdown voltage (Vb 150 V) simultaneously, combined with…
Flexible Transparent Field-Effect Diodes Fabricated at Low-Temperature with All Oxide Materials
Yonghui Zhang, Zengxia Mei, Shujuan Cui +3
Flexible fully transparent diodes with high rectification ratio of 5 e 8 are fabricated with all oxide materials at low temperature. The devices are optically transparent in visibl…
Oxygen vacancies: The origin of n-type conductivity in ZnO
Lishu Liu, Zengxia Mei, Aihua Tang +4
Oxygen vacancy (VO) is a common native point defects that plays crucial roles in determining the physical and chemical properties of metal oxides such as ZnO. However, fundamental…
Fluorine doping: A feasible solution to enhancing the conductivity of high-resistance wide bandgap Mg0.51Zn0.49O active components
Lishu Liu, Zengxia Mei, Yaonan Hou +5
N-type doping of high-resistance wide bandgap semiconductors, wurtzite high-Mg-content MgxZn1-xO for instance, has always been a fundamental application-motivated research issue. H…