1 citations · 1 across the 1 of their papers we have counts for
3 papers
cond-mat.mtrl-sci2018
Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study
Patricia Almeida Carvalho, Annett Thørgesen, Quanbao Ma +9
Boron (B) has the potential for generating an intermediate band in cubic silicon carbide (3C-SiC), turning this material into a highly efficient absorber for single-junction solar…
cond-mat.mtrl-sci2017★ 1 cited
GaZn-VZn acceptor complex defect in Ga-doped ZnO
Aihua Tang, Zengxia Mei, Yaonan Hou +5
Identification of complex defect has been a long-sought-after physics problem for controlling the defect population and engineering the useful properties in wide bandgap oxide semi…
cond-mat.mtrl-sci2016
Oxygen vacancies: The origin of n-type conductivity in ZnO
Lishu Liu, Zengxia Mei, Aihua Tang +4
Oxygen vacancy (VO) is a common native point defects that plays crucial roles in determining the physical and chemical properties of metal oxides such as ZnO. However, fundamental…