353 citations · 626 across the 11 of their papers we have counts for
11 papers
Reactive pulsed direct current magnetron sputtering deposition of semiconducting yttrium oxide thin film in ultralow oxygen atmosphere: A spectroscopic and structural investigation of growth dynamics
H. Arslan, I. Aulika, A. Sarakovskis +5
An experimental investigation was conducted to explore spectroscopic and structural characterization of semiconducting yttrium oxide thin film deposited at 623 K (+/- 5K) utilizing…
High versus low energy ion irradiation impact on functional properties of PLD-grown alumina coatin
A. Zaborowska, Ł. Kurpaska, E. Wyszkowska +5
It is well known that ion irradiation can be successfully used to reproduce microstructural features triggered by neutron irradiation. Even though the irradiation process brings ma…
Absolute radiation tolerance of amorphous alumina coatings at room temperature
A. Zaborowska, Ł. Kurpaska, M. Clozel +10
In this study structural and mechanical properties of a 1 um thick Al2O3 coating, deposited on 316L stainless steel by Pulsed Laser Deposition (PLD), subjected to high energy ion i…
Universal radiation tolerant semiconductor
Alexander Azarov, Javier García Fernández, Junlei Zhao +10
Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluen…
Interplay of the disorder and strain in gallium oxide
Alexander Azarov, Vishnukanthan Venkatachalapathy, Platon Karaseov +4
Ion irradiation is a powerful tool to tune properties of semiconductors and, in particular, of gallium oxide (Ga2O3) which is a promising ultra-wide bandgap semiconductor exhibitin…
Disorder-induced ordering in gallium oxide polymorphs
Alexander Azarov, Calliope Bazioti, Vishnukanthan Venkatachalapathy +3
Polymorphs are common in nature and can be stabilized by applying external pressure in materials. The pressure/strain can also be induced by the gradually accumulated radiation dis…
Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study
Patricia Almeida Carvalho, Annett Thørgesen, Quanbao Ma +9
Boron (B) has the potential for generating an intermediate band in cubic silicon carbide (3C-SiC), turning this material into a highly efficient absorber for single-junction solar…
GaZn-VZn acceptor complex defect in Ga-doped ZnO
Aihua Tang, Zengxia Mei, Yaonan Hou +5
Identification of complex defect has been a long-sought-after physics problem for controlling the defect population and engineering the useful properties in wide bandgap oxide semi…
Oxygen vacancies: The origin of n-type conductivity in ZnO
Lishu Liu, Zengxia Mei, Aihua Tang +4
Oxygen vacancy (VO) is a common native point defects that plays crucial roles in determining the physical and chemical properties of metal oxides such as ZnO. However, fundamental…
Germanium-based quantum emitters for time-reordering entanglement scheme with degenerate exciton and biexciton states
Nicola Dotti, Francesco Sarti, Sergio Bietti +7
We address the photoluminescence emission of individual germanium extrinsic centers in Al_0.3Ga0.7As epilayers grown on germanium substrates. Through a thorough analysis of micro-p…
Fluorine doping: A feasible solution to enhancing the conductivity of high-resistance wide bandgap Mg0.51Zn0.49O active components
Lishu Liu, Zengxia Mei, Yaonan Hou +5
N-type doping of high-resistance wide bandgap semiconductors, wurtzite high-Mg-content MgxZn1-xO for instance, has always been a fundamental application-motivated research issue. H…