353 citations · 376 across the 3 of their papers we have counts for
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cond-mat.mtrl-sci2017★ 1 cited
GaZn-VZn acceptor complex defect in Ga-doped ZnO
Aihua Tang, Zengxia Mei, Yaonan Hou +5
Identification of complex defect has been a long-sought-after physics problem for controlling the defect population and engineering the useful properties in wide bandgap oxide semi…
cond-mat.mtrl-sci2016★ 353 cited
Oxygen vacancies: The origin of n-type conductivity in ZnO
Lishu Liu, Zengxia Mei, Aihua Tang +4
Oxygen vacancy (VO) is a common native point defects that plays crucial roles in determining the physical and chemical properties of metal oxides such as ZnO. However, fundamental…
cond-mat.mtrl-sci2014★ 22 cited
Fluorine doping: A feasible solution to enhancing the conductivity of high-resistance wide bandgap Mg0.51Zn0.49O active components
Lishu Liu, Zengxia Mei, Yaonan Hou +5
N-type doping of high-resistance wide bandgap semiconductors, wurtzite high-Mg-content MgxZn1-xO for instance, has always been a fundamental application-motivated research issue. H…