Strain-tunable inter-valley scattering defines universal mobility enhancement in n- and p-type 2D TMDs

Sheikh Mohd Ta-Seen Afrid, He Lin Zhao, Arend M. van der Zande +1

Strain fundamentally alters carrier transport in semiconductors by modifying their band structure and scattering pathways. In transition-metal dichalcogenides (TMDs), an emerging c…