Influences of ALD Al${}_2$O${}_3$ on the surface band-bending of c-plane, Ga-face GaN and the implication to GaN-collector npn heterojunction bipolar transistors

Jiarui Gong, Jisoo Kim, TienKhee Ng +7

Due to the lack of effective p-type doping in GaN and the adverse effects of surface band-bending of GaN on electron transport, developing practical GaN heterojunction bipolar tran…