135 citations · 288 across the 10 of their papers we have counts for
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Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 n-p-n double heterojunctions
Jie Zhou, Ashok Dheenan, Jiarui Gong +13
Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applicati…
Influences of ALD AlO on the surface band-bending of c-plane, Ga-face GaN and the implication to GaN-collector npn heterojunction bipolar transistors
Jiarui Gong, Jisoo Kim, TienKhee Ng +7
Due to the lack of effective p-type doping in GaN and the adverse effects of surface band-bending of GaN on electron transport, developing practical GaN heterojunction bipolar tran…
Lattice-mismatched semiconductor heterostructures
Dong Liu, Sang June Cho, Jung-Hun Seo +19
Semiconductor heterostructure is a critical building block for modern semiconductor devices. However, forming semiconductor heterostructures of lattice-mismatch has been a great ch…
Accelerating vapor condensation with daytime radiative cooling
Ming Zhou, Haomin Song, Xingyu Xu +8
Vapor condensation plays a crucial role in solar water-purification technologies. Conventional condensers in solar water-purification systems do not provide sufficient cooling powe…
229 nm UV LEDs using p-type silicon for increased hole injection
Dong Liu, Sang June Cho, Jeongpil Park +10
Ultraviolet (UV) light emission at 229 nm wavelength from diode structures based on AlN/Al0.77Ga0.23N quantum wells and using p-type Si to significantly increase hole injection was…
UVC LEDs on Bulk AlN Substrates Using Silicon Nanomembranes for Efficient Hole Injection
Sang June Cho, Dong Liu, Jung-Hun Seo +12
As UV LEDs are explored at shorter wavelengths (< 280 nm) into the UVC spectral range, the crystalline quality of epitaxial AlGaN films with high Al compositions and inefficient ho…