124 citations · 496 across the 13 of their papers we have counts for
1 paper · 1 filter
Kan-Hao Xue, Carlos A. Paz de Araujo, Jolanta Celinska +1
The physics of the Mott transition in the anodic region of NiO Resistance Random Access Memory (RRAM) is discussed from the Hubbard model. The Hubbard approximation is examined in…