419 citations · 3.2k across the 44 of their papers we have counts for
15 papers · 1 filter
Geometric density of states of electronic structures for local responses: Phase information from the amplitudes of STM measurement
Shu-Hui Zhang, Jin Yang, Ding-Fu Shao +3
Electronic band structures underlie the physical properties of crystalline materials, their geometrical exploration renovates the conventional cognition and brings about novel appl…
Tunneling valley Hall effect driven by tilted Dirac fermions
Shu-Hui Zhang, Ding-Fu Shao, Zi-An Wang +3
Valleytronics is a research field utilizing a valley degree of freedom of electrons for information processing and storage. A strong valley polarization is critical for realistic v…
Néel Spin Currents in Antiferromagnets
Ding-Fu Shao, Yuan-Yuan Jiang, Jun Ding +7
Ferromagnets are known to support spin-polarized currents that control various spin-dependent transport phenomena useful for spintronics. On the contrary, fully compensated antifer…
Spin-Neutral Tunneling Anomalous Hall Effect
Ding-Fu Shao, Shu-Hui Zhang, Rui-Chun Xiao +4
Anomalous Hall effect (AHE) is a fundamental spin-dependent transport property that is widely used in spintronics. It is generally expected that currents carrying net spin polariza…
Tilted spin current generated by the collinear antiferromagnet RuO2
Arnab Bose, Nathaniel J. Schreiber, Rakshit Jain +8
We report measurements demonstrating that when the Neel vector of the collinear antiferromagnet RuO2 is appropriately canted relative to the sample plane, the antiferromagnet gener…
Robust wavefront dislocations of Friedel oscillations in gapped graphene
Shu-Hui Zhang, Jin Yang, Ding-Fu Shao +2
Friedel oscillation is a well-known wave phenomenon, which represents the oscillatory response of electron waves to imperfection. By utilizing the pseudospin-momentum locking in ga…
Spin-neutral currents for spintronics
Ding-Fu Shao, Shu-Hui Zhang, Ming Li +2
Electric currents carrying a net spin polarization are widely used in spintronics, whereas globally spin-neutral currents are expected to play no role in spin-dependent phenomena.…
Giant Transport Anisotropy in ReS Revealed via Nanoscale Conducting Path Control
Dawei Li, Shuo Sun, Zhiyong Xiao +5
The low in-plane symmetry in layered 1T'-ReS results in strong band anisotropy, while its manifestation in the electronic properties is challenging to resolve due to the lack o…
Two-dimensional metals for piezotronics devices based on Berry curvature dipole
Xiao Rui-Chun, Shao Ding-Fu, Zhang Zhi-Qiang +1
Piezotronics is an emerging field, which exploits strain to control the transport properties in condensed matters. At present, piezotronics research majorly focuses on insulators w…
Polar Coupling Enabled Nonlinear Optical Filtering at MoS/Ferroelectric Heterointerfaces
Dawei Li, Xi Huang, Zhiyong Xiao +8
Complex oxide heterointerfaces and van der Waals heterostructures present two versatile but intrinsically different platforms for exploring emergent quantum phenomena and designing…
Dirac nodal line metal for topological antiferromagnetic spintronics
Ding-Fu Shao, Gautam Gurung, Shu-Hui Zhang +1
Topological antiferromagnetic (AFM) spintronics is an emerging field of research, which exploits the Néel vector to control the topological electronic states and the associated spi…
Strain-induced enhancement of thermoelectric performance in a ZrS2 monolayer
H. Y. Lv, W. J. Lu, D. F. Shao +2
The increase of a thermoelectric material's figure of merit (ZT value) is limited by the interplay of the transport coefficients. Here we report the greatly enhanced thermoelectric…
Strain-controlled switch between ferromagnetism and antiferromagnetism in 1T-CrX2 (X = Se, Te) monolayers
H. Y. Lv, W. J. Lu, D. F. Shao +2
We report on the strain-induced switch between ferromagnetic (FM) and antiferromagnetic (AFM) orderings in 1T-CrX2 (X = Se, Te) monolayers based on the first-principles calculation…
Perfect charge compensation in WTe2 for the extraordinary magnetoresistance: From bulk to monolayer
H. Y. Lv, W. J. Lu, D. F. Shao +3
The electronic structure of WTe2 bulk and layers are investigated by using the first principles calculations. The perfect electron-hole (n-p) charge compensation and high carrier m…
Enhanced thermoelectric performance of phosphorene by strain-induced band convergence
H. Y. Lv, W. J. Lu, D. F. Shao +1
The newly emerging monolayer phosphorene was recently predicted to be a promising thermoelectric material. In this work, we propose to further enhance the thermoelectric performanc…