activity
20142021
most citedIntrinsic ferroelectricity in Y-doped HfO2 thin films

252 citations · 580 across the 9 of their papers we have counts for

collaborators

9 papers

cond-mat.mtrl-sci2021★ 1 cited

Atomic step disorder on polycrystalline surfaces leads to spatially inhomogeneous work functions

Morgann Berg, Sean W. Smith, David A. Scrymgeour +11

Structural disorder causes materials surface electronic properties, e.g. work function () to vary spatially, yet it is challenging to prove exact causal relationships to underly…

cond-mat.mtrl-sci2021★ 252 cited

Intrinsic ferroelectricity in Y-doped HfO2 thin films

Yu Yun, Pratyush Buragohain, Ming Li +10

Ferroelectric HfO2-based materials hold great potential for widespread integration of ferroelectricity into modern electronics due to their robust ferroelectric properties at the n…

cond-mat.mtrl-sci2020★ 33 cited

Applying configurational complexity to the 2D Ruddlesden-Popper crystal structure

Wenrui Zhang, Alessandro R. Mazza, Elizabeth Skoropata +11

The 2D layered Ruddlesden-Popper crystal structure can host a broad range of functionally important behaviors. Here we establish extraordinary configurational disorder in a two dim…

cond-mat.mtrl-sci2020★ 9 cited

Low Thermal Budget High-k/Metal Surface Gate for Buried Donor-Based Devices

Evan M. Anderson, DeAnna M. Campbell, Leon N. Maurer +8

Atomic precision advanced manufacturing (APAM) offers creation of donor devices in an atomically thin layer doped beyond the solid solubility limit, enabling unique device physics.…

cond-mat.mtrl-sci2019★ 93 cited

Uncompensated Polarization in Incommensurate Modulations of Perovskite Antiferroelectrics

Tao Ma, Zhongming Fan, Bin Xu +6

Complex polar structures of incommensurate modulations (ICMs) are revealed in chemically modified PbZrO perovskite antiferroelectrics using advanced transmission electron micro…

cond-mat.mtrl-sci2018★ 5 cited

Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La_{2/3}Sr_{1/3}MnO_3:ZnO-nanopillar composites

W. Pan, P. Lu, J. F. Ihlefeld +4

Magnetoresistive random-access memory (MRAM) is poised to become a next-generation information storage device. Yet, many materials challenges remain unsolved before it can become a…