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20132019
most citedProspects of Zero Schottky Barrier Height in a Graphene Inserted MoS2-Metal Interface

45 citations · 168 across the 6 of their papers we have counts for

collaborators

7 papers

cond-mat.mes-hall2019★ 35 cited

Prediction of Coupled Electronic and Phononic Ferroelectricity in Strained 2D h-NbN: First-principles Theoretical Analysis

Anuja Chanana, Umesh V. Waghmare

Using first-principles density functional theoretical analysis, we predict coexisting ferroelectric and semi-metallic states in two-dimensional monolayer of h-NbN subjected to elec…

cond-mat.mes-hall2017★ 15 cited

Terahertz spectroscopy of an electron-hole bilayer system in AlN/GaN/AlN quantum wells

H. Condori Quispe, S. M. Islam, S. Bader +7

We describe studies on the nanoscale transport dynamics of carriers in strained AlN/GaN/AlN quantum wells: an electron-hole bilayer charge system with large difference in transport…

cond-mat.mes-hall2016★ 22 cited

Density Functional Theory based Study of Chlorine Doped WS2-metal Interface

Anuja Chanana, Santanu Mahapatra

Investigation of a TMD-metal interface is essential for the effective functioning of monolayer TMD based field effect transistors (FETs). In this work, we employ Density Functional…

cond-mat.mes-hall2015★ 45 cited

Prospects of Zero Schottky Barrier Height in a Graphene Inserted MoS2-Metal Interface

Anuja Chanana, Santanu Mahapatra

A low Schottky barrier height (SBH) at source/drain contact is essential for achieving high drive current in atomic layer MoS2 channel based field-effect transistors. Approaches su…

cond-mat.mes-hall2015

Analysis of Vacancy defects in Hybrid Graphene-Boron Nitride Armchair Nanoribbon based n-MOSFET at Ballistic Limit

Anuja Chanana, Amretashis Sengupta, Santanu Mahaptra

Here, we report the performance of vacancy affected supercell of a hybrid Graphene-Boron Nitride embedded armchair nanoribbon (a-GNR-BN) based n-MOSFET at its ballistic transport l…

cond-mat.mes-hall2014★ 31 cited

First Principles Study of Metal Contacts to Monolayer Black Phosphorous

Anuja Chanana, Santanu Mahapatra

Atomically thin layered black phosphorous (BP) has recently appeared as an alternative to the transitional metal di chalcogenides for future channel material in a MOS transistor du…

cond-mat.mes-hall2013★ 20 cited

Performance Analysis of Boron Nitride Embedded Armchair Graphene Nanoribbon MOSFET with Stone Wales Defects

Anuja Chanana, Amretashis Sengupta, Santanu Mahapatra

We study the performance of a hybrid Graphene-Boron Nitride {GNR-BN} armchair nanoribbon {a-GNR-BN} MOSFET at its ballistic transport limit. We consider three geometric configurati…