activity
19962005
most citedSpin-Hall effect on edge magnetization and electric conductance of a 2D semiconductor strip

67 citations · 353 across the 11 of their papers we have counts for

collaborators

11 papers

cond-mat.mes-hall2005★ 67 cited

Spin-Hall effect on edge magnetization and electric conductance of a 2D semiconductor strip

A. G. Mal'shukov, L. Y. Wang, C. S. Chu +1

The intrinsic spin-Hall effect on spin accumulation and electric conductance in a diffusive regime of a 2D electron gas has been studied for a 2D strip of a finite width. It is sho…

cond-mat.mes-hall2004★ 45 cited

Generation of spin current and polarization under dynamic gate control of spin-orbit interaction in low-dimensional semiconductor systems

C. S. Tang, A. G. Mal'shukov, K. A. Chao

Based on the Keldysh formalism, the Boltzmann kinetic equation and the drift diffusion equation have been derived for studying spin polarization flow and spin accumulation under ef…

cond-mat.mes-hall2004★ 61 cited

Spin-Hall conductivity of a disordered 2D electron gas with Dresselhaus spin-orbit interaction

A. G. Mal'shukov, K. A. Chao

The spin-Hall conductivity of a disordered 2D electron gas has been calculated for an arbitrary spin-orbit interaction. We have found that in the diffusive regime of electron trans…

cond-mat.mes-hall2001★ 17 cited

Quantum oscillations of spin current through a III-V semiconductor loop

A. G. Mal'shukov, V. Shlyapin, K. A. Chao

We have investigated the transport of spin polarization through a classically chaotic semiconductor loop with a strong Rashba spin-orbit interaction. We found that if the escape ti…

cond-mat.mes-hall2001★ 13 cited

Optoelectric spin injection in semiconductor heterostructures without ferromagnet

A. G. Mal'shukov, K. A. Chao

We have shown that electron spin density can be generated by a dc current flowing across a junction with an embedded asymmetric quantum well. Spin polarization is created in t…

cond-mat.mtrl-sci2000★ 54 cited

Optical transitions in broken gap heterostructures

E. Halvorsen, Y. Galperin, K. A. Chao

We have used an eight band model to investigate the electronic structures and to calculate the optical matrix elements of InAs-GaSb broken gap semiconductor heterostructures. The u…