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cond-mat.mes-hall2016★ 7 cited
Index-antiguiding in narrow-ridge GaN-based laser diodes investigated by measurements of the current-dependent gain and index spectra and by self-consistent simulation
Luca Redaelli, Hans Wenzel, Joachim Piprek +6
The threshold current density of narrow (1.5 μm) ridge-waveguide InGaN multi-quantum-well laser diodes, as well as the shape of their lateral far-field patterns, strongly depend on…
cond-mat.mes-hall2016★ 70 cited
Effect of the quantum well thickness on the performance of InGaN photovoltaic cells
L. Redaelli, A. Mukhtarova, S. Valdueza-Felip +7
We report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of In0.12Ga0.88N/GaN multiple quantum well solar cells. The band-to-ban…