First-Principles Investigation of Surface-Induced Effects on the Properties of Divacancy Qubits in 3C-SiC

Rosario G. Viglione, Giovanni Castorina, Gaetano Calogero +4

Neutral silicon-carbon divacancy (V${}_{Si}$V${}_C$) in cubic silicon carbide (3C-SiC) is a promising class of point defects for quantum technologies based on active crystalline cent…