16 citations · 22 across the 3 of their papers we have counts for
4 papers
Dispersive readout of a silicon quantum device using an atomic force microscope-based rf gate sensor
Artem O. Denisov, Gordian Fuchs, Seong W. Oh +1
We demonstrate dispersive charge sensing of Si/SiGe single and double quantum dots (DQD) by coupling sub-micron floating gates to a radio frequency reflectometry (rf-reflectometry)…
Second Quantization: Gating a Quantum Dot Through the Sequential Removal of Single Electrons from a Nanoscale Floating Gate
Artem O. Denisov, Gordian Fuchs, Seong W. Oh +1
We use the tip of an atomic force microscope (AFM) to charge floating metallic gates defined on the surface of a Si/SiGe heterostructure. The AFM tip serves as an ideal and movable…
Microwave-frequency scanning gate microscopy of a Si/SiGe double quantum dot
Artem O. Denisov, Seong W. Oh, Gordian Fuchs +6
Conventional quantum transport methods can provide quantitative information on spin, orbital, and valley states in quantum dots, but often lack spatial resolution. Scanning tunneli…
Quasiparticle interference of the Fermi arcs and surface-bulk connectivity of a Weyl semimetal
Hiroyuki Inoue, Andras Gyenis, Zhijun Wang +6
Weyl semimetals host topologically protected surface states, with arced Fermi surface contours that are predicted to propagate through the bulk when their momentum matches that of…