13 citations · 13 across the 5 of their papers we have counts for
5 papers
Factors Determining the Carrier Distribution in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes
Dong-Pyo Han, Jong-In Shim, Dong-Soo Shin
Factors determining the carrier distribution in InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) are studied via photoluminescence and temperature-dependent elect…
Comparative Analysis of Current Component in InGaN-based Blue and AlGaInP-based Red Light-emitting Diode
Dong-Pyo Han, Jong-In Shim, Dong-Soo Shin
In this paper, we aim to understand the apparent characteristics of IQE and I-V curve in AlGaInP and InGaN LED devices. For the analysis, we separate the current into radiative cur…
Origin of Operating Voltage Increase in InGaN-based Light-emitting Diodes under High Injection: Phase Space Filling Effect on Forward Voltage Characteristics
Dong-Pyo Han, Jong-In Shim, Dong-Soo Shin
As an attempt to further elucidate the operating voltage increase in InGaN-based light-emitting diodes (LEDs), the radiative and nonradiative current components are separately anal…
Analysis of Carrier Accumulation in Active Region by Energy Loss Mechanisms in InGaN Light-Emitting Diodes
Dong-Pyo Han, Jong-In Shim, Dong-Soo Shin
Carrier recombination and transport processes play key roles in determining the optoelectronic performances such as the efficiency droop and forward voltage in InGaN/GaN multiple-q…
Enhanced high-temperature performance of GaN light-emitting diodes grown on silicon substrates
Hyun Kum, Namsung Kim, Young Hwan Park +9
We compare the temperature dependence of optical and electrical characteristics of commercially available GaN light-emitting diodes (LEDs) grown on silicon and sapphire substrates.…