2 papers
cond-mat.mes-hall2020
Tuning Conductivity Type in Monolayer WS2 and MoS2 by Sulfur Vacancies
Jing Yang, Fabio Bussolotti, Hiroyo Kawai +1
While n-type semiconductor behavior appears to be more common in as-prepared two-dimensional (2D) transition metal dichalcogenides (TMDCs), substitutional doping with acceptor atom…
cond-mat.mtrl-sci2016
Flexible MgO barrier magnetic tunnel junctions
Li Ming Loong, Wonho Lee, Xuepeng Qiu +5
Flexible electronic devices require the integration of multiple crucial components on soft substrates to achieve their functions. In particular, memory devices are the fundamental…