48 citations · 100 across the 4 of their papers we have counts for
4 papers
Tuning Conductivity Type in Monolayer WS2 and MoS2 by Sulfur Vacancies
Jing Yang, Fabio Bussolotti, Hiroyo Kawai +1
While n-type semiconductor behavior appears to be more common in as-prepared two-dimensional (2D) transition metal dichalcogenides (TMDCs), substitutional doping with acceptor atom…
Flexible MgO barrier magnetic tunnel junctions
Li Ming Loong, Wonho Lee, Xuepeng Qiu +5
Flexible electronic devices require the integration of multiple crucial components on soft substrates to achieve their functions. In particular, memory devices are the fundamental…
Elastic transport through dangling-bond silicon wires on H passivated Si(100)
Mikaël Kepenekian, Frederico D. Novaes, Roberto Robles +4
We evaluate the electron transmission through a dangling-bond wire on Si(100)-H (2x1). Finite wires are modelled by decoupling semi-infinite Si electrodes from the dangling-bond wi…
Negative tunneling magnetoresistance by canted magnetization in MgO/NiO tunnel barriers
Hyunsoo Yang, See-Hun Yang, Dong-Chen Qi +6
The influence of insertion of an ultra-thin NiO layer between the MgO barrier and ferromagnetic electrode in magnetic tunnel junctions has been investigated by measuring the tunnel…