130 citations · 319 across the 8 of their papers we have counts for
8 papers
Nonlinear analog spintronics with van der Waals heterostructures
S. Omar, M. Gurram, K. Watanabe +3
The current generation of spintronic devices, which use electron-spin relies on linear operations for spin-injection, transport and detection processes. The existence of nonlineari…
Efficient spin injection into graphene through trilayer hBN tunnel barriers
Johannes Christian Leutenantsmeyer, Josep Ingla-Aynés, Mallikajurna Gurram +1
We characterize the spin injection into bilayer graphene fully encapsulated in hBN using trilayer (3L) hexagonal boron nitride (hBN) tunnel barriers. As a function of the DC bias,…
Bias dependent spin injection into graphene on YIG through bilayer hBN tunnel barriers
J. C. Leutenantsmeyer, T. Liu, M. Gurram +2
We study the spin injection efficiency into single and bilayer graphene on the ferrimagnetic insulator Yttrium-Iron-Garnet (YIG) through an exfoliated tunnel barrier of bilayer hex…
Electrical spin injection, transport, and detection in graphene-hexagonal boron nitride van der Waals heterostructures: progress and perspectives
Mallikarjuna Gurram, Siddhartha Omar, Bart J. van Wees
The current research in graphene spintronics strives for achieving a long spin lifetime, and efficient spin injection and detection in graphene. In this article, we review how hexa…
Spin transport in two-layer-CVD-hBN/graphene/hBN heterostructures
Mallikarjuna Gurram, Siddhartha Omar, Simon Zihlmann +5
We study room temperature spin transport in graphene devices encapsulated between a layer-by-layer-stacked two-layer-thick chemical vapour deposition (CVD) grown hexagonal boron ni…
Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures
Mallikarjuna Gurram, Siddhartha Omar, Bart J. van Wees
We study spin transport in a fully hBN encapsulated monolayer-graphene van der Waals (vdW) heterostructure, at room temperature. A top-layer of bilayer-hBN is used as a tunnel barr…
Spin transport in fully hexagonal boron nitride encapsulated graphene
M. Gurram, S. Omar, S. Zihlmann +3
We study fully hexagonal boron nitride (hBN)-encapsulated graphene spin valve devices at room temperature. The device consists of a graphene channel encapsulated between two crysta…
Spin Relaxation in Graphene with self-assembled Cobalt Porphyrin Molecules
S. Omar, M. Gurram, I. J. Vera-Marun +5
In graphene spintronics, interaction of localized magnetic moments with the electron spins paves a new way to explore the underlying spin relaxation mechanism. A self-assembled lay…