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Electronic structure of buried LaNiO3 layers in (111)-oriented LaNiO3/LaMnO3 superlattices probed by soft x-ray ARPES
F. Y. Bruno, M. Gibert, S. McKeown Walker +10
Taking advantage of the large electron escape depth of soft x-ray angle resolved photoemission spectroscopy we report electronic structure measurements of (111)-oriented [LaNiO3/La…
Direct observation of how the heavy fermion state develops in CeCoIn5
Q. Y. Chen, D. F. Xu, X. H. Niu +19
Heavy fermion materials gain high electronic masses and expand Fermi surfaces when the high-temperature localized f electrons become itinerant and hybridize with the conduction ban…
Evidence for a Strong Topological Insulator Phase in
G. Manzoni, L. Gragnaniello, G. Autès +16
The complex electronic properties of have recently stimulated in-depth investigations that assigned this material to either a topological insulator or a 3D Dirac…
NaFeCuAs: A pnictide insulating phase induced by on-site Coulomb interaction
C. E. Matt, N. Xu, B. Q. Lv +13
In the studies of iron-pnictides, a key question is whether their bad-metal state from which the superconductivity emerges lies in close proximity with a magnetically ordered insul…
Weakly-correlated nature of ferromagnetism in non symmorphic CrO revealed by bulk-sensitive soft X ray ARPES
F. Bisti, V. A. Rogalev, M. Karolak +8
Chromium dioxide CrO belongs to a class of materials called ferromagnetic half-metals, whose peculiar aspect is to act as a metal in one spin orientation and as semiconductor o…
Entanglement and manipulation of the magnetic and spin-orbit order in multiferroic Rashba semiconductors
J. Krempasky, S. Muff, F. Bisti +13
The interplay between electronic eigenstates, spin, and orbital degrees of freedom, combined with fundamental breaking of symmetries is currently one of the most exciting fields of…
Fermi surface and effective masses in photoemission response of the (BaK)FeAs superconductor
Gerald Derondeau, Federico Bisti, Masaki Kobayashi +9
The angle-resolved photoemission spectra of the superconductor (BaK)FeAs have been investigated both experimentally and theoretically. Our results explain the p…
Band Structure of EuO/Si Spin Contact: Justification for Silicon Spintronics
Leonid L. Lev, Dmitry V. Averyanov, Andrey M. Tokmachev +4
Silicon spintronics requires injection of spin-polarized carriers into Si. An emerging approach is direct electrical injection from a ferromagnetic semiconductor - EuO being the pr…