3 papers
cond-mat.mtrl-sci2025
High Mobility Multiple-Channel AlScN/GaN Heterostructures
Aias Asteris, Thai-Son Nguyen, Chuan F. C. Chang +4
Aluminum scandium nitride (AlScN) is a promising barrier material for gallium nitride (GaN)-based transistors for the next generation of radio-frequency electronic devices. In this…
cond-mat.mes-hall2025
Quantum oscillations of holes in GaN
Chuan F. C. Chang, Joseph E. Dill, Zexuan Zhang +12
GaN has emerged to be a major semiconductor akin to silicon due to its revolutionary impacts in solid state lighting, critically enabled by p-type doping, and high-performance radi…
physics.app-ph2024
Two-Carrier Model-Fitting of Hall Effect in Semiconductors with Dual-Band Occupation: A Case Study in GaN Two-Dimensional Hole Gas
Joseph E. Dill, Chuan F. C. Chang, Debdeep Jena +1
We develop a two-carrier Hall effect model fitting algorithm to analyze temperature-dependent magnetotransport measurements of a high-density ( cm/Vs) polar…