12 citations · 22 across the 5 of their papers we have counts for
3 papers · 2 filters
Fluence Dependence of Charge Collection of irradiated Pixel Sensors
T. Rohe, D. Bortoletto, V. Chiochia +13
The barrel region of the CMS pixel detector will be equipped with ``n-in-n'' type silicon sensors. They are processed on DOFZ material, use the moderated p-spray technique and feat…
Simulation of Heavily Irradiated Silicon Pixel Sensors and Comparison with Test Beam Measurements
Vincenzo Chiochia, Morris Swartz, Daniela Bortoletto +13
Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field w…
Type inversion in irradiated silicon: a half truth
M. Swartz, D. Bortoletto, V. Chiochia +10
Charge collection measurements performed on heavily irradiated p-spray dofz pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field w…