102 citations · 342 across the 15 of their papers we have counts for
15 papers
Reconstructing the potential configuration in a high-mobility semiconductor heterostructure with scanning gate microscopy
Gaëtan J. Percebois, Antonio Lacerda-Santos, Boris Brun +3
The weak disorder potential seen by the electrons of a two-dimensional electron gas in high-mobility semiconductor heterostructures leads to fluctuations in the physical properties…
A single hole spin with enhanced coherence in natural silicon
N. Piot, B. Brun, V. Schmitt +14
Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric…
Graphene whisperitronics: transducing whispering gallery modes into electronic transport
Boris Brun, Viet-Hung Nguyen, Nicolas Moreau +6
When confined in circular cavities, graphene relativistic charge carriers occupy whispering gallery modes (WGM) in analogy to classical acoustic and optical fields. The rich geomet…
Quantum Hall nano-interferometer in graphene
N. Moreau, B. Brun, S. Somanchi +4
Quantum Hall edge states offer avenues for quasiparticle interferometry, provided that the ratio between phase coherence length and quantum Hall interferometer (QHI) size is large…
Contacts and upstream modes explain the electron-hole asymmetry in the graphene quantum Hall regime
Nicolas Moreau, Boris Brun, Sowmya Somanchi +4
Observations of electron-hole asymmetry in transport through graphene devices at high magnetic field challenge prevalent models of the graphene quantum Hall effect. Here, we study…
Upstream modes and antidots poison graphene quantum Hall effect
Nicolas Moreau, Boris Brun, Sowmya Somanchi +4
The quantum Hall effect is the seminal example of topological protection, as charge carriers are transmitted through one-dimensional edge channels where backscattering is prohibite…