activity
20162026
most citedEngineering strain relaxation of GeSn epilayers on Ge/Si(001) substrates

16 citations · 43 across the 5 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2026

Investigation on Thermal Stability of Epi-GeSn Directly on Si (001)

Tharundev V, Dushyant Singh, Vigneshswari SR +3

In this paper we investigate the structural properties and thermal stability of metastable Ge1-xSnx epilayers (~4.5 at.% Sn) grown directly on Si(001) substrates by high-resolution…

cond-mat.mtrl-sci2018

Engineering decomposition-resilience and de-coalescence of GaN nanowire ensembles

Swagata Bhunia, Ritam Sarkar, Dhiman Nag +4

The rapidly increasing interest in nanowires (NWs) of GaN and associated III-Nitrides for (opto-)electronic applications demands immediate addressal of the technological challenges…

physics.app-ph2018★ 16 cited

Engineering strain relaxation of GeSn epilayers on Ge/Si(001) substrates

Krista R Khiangte, Jaswant S Rathore, Vaibhav Sharma +2

A mechanism of controlling the degree of strain relaxation in GeSn epilayers, grown by molecular beam epitaxy on Ge/Si(001) substrates, is reported in this work. It is demonstrated…

physics.app-ph2018★ 10 cited

Wafer-scale all-epitaxial GeSn-on-insulator on Si(111) by molecular beam epitaxy

Krista R Khiangte, Jaswant S Rathore, J. Schmidt +3

All epitaxial GeSn-on-insulator (GeSnOI) heterostructures have been realized by conventional molecular beam epitaxy of both GeSn and a thin Gd2O3 insulating layer, on Si(111) subst…

cond-mat.mtrl-sci2018★ 15 cited

Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd2O3 (111) /Si (111) heterostructures

Krista R Khiangte, Jaswant S Rathore, Sudipta Das +5

Molecular beam epitaxy of Ge (111) thin films on epitaxial-Gd2O3/Si(111) substrates is reported, along with a systematic investigation of the evolution of Ge growth, and structural…

cond-mat.mtrl-sci2016★ 2 cited

Comprehensive investigation on the correlation of growth, structural and optical properties of GaN nanowires grown on Si(111) substrates by plasma assisted molecular beam epitaxy technique

Ritam Sarkar, R. Fandan, Krista R. Khiangte +6

The present study elucidates the correlation between the structural and optical properties of GaN nanowires grown on Si(111) substrate by plasma assisted molecular beam epitaxy (PA…