4 papers
Engineering decomposition-resilience and de-coalescence of GaN nanowire ensembles
Swagata Bhunia, Ritam Sarkar, Dhiman Nag +4
The rapidly increasing interest in nanowires (NWs) of GaN and associated III-Nitrides for (opto-)electronic applications demands immediate addressal of the technological challenges…
Engineering strain relaxation of GeSn epilayers on Ge/Si(001) substrates
Krista R Khiangte, Jaswant S Rathore, Vaibhav Sharma +2
A mechanism of controlling the degree of strain relaxation in GeSn epilayers, grown by molecular beam epitaxy on Ge/Si(001) substrates, is reported in this work. It is demonstrated…
Wafer-scale all-epitaxial GeSn-on-insulator on Si(111) by molecular beam epitaxy
Krista R Khiangte, Jaswant S Rathore, J. Schmidt +3
All epitaxial GeSn-on-insulator (GeSnOI) heterostructures have been realized by conventional molecular beam epitaxy of both GeSn and a thin Gd2O3 insulating layer, on Si(111) subst…
Comprehensive investigation on the correlation of growth, structural and optical properties of GaN nanowires grown on Si(111) substrates by plasma assisted molecular beam epitaxy technique
Ritam Sarkar, R. Fandan, Krista R. Khiangte +6
The present study elucidates the correlation between the structural and optical properties of GaN nanowires grown on Si(111) substrate by plasma assisted molecular beam epitaxy (PA…