activity
20142026
most citedDisentangling nonradiative recombination processes in Ge micro-crystals on Si substrates

21 citations · 34 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mtrl-sci2026

Growth and characterization of planar hexagonal Ge on CdS

Andrea Besana, Veronica Regazzoni, Marco Faverzani +13

Hexagonal group-IV semiconductors have attracted increasing interest owing to their unconventional electronic and optical properties compared to the cubic diamond phase. However, t…

cond-mat.mes-hall2026

Low-Noise Quantum Dots in Ultra-Shallow Ge/SiGe Heterostructures for Prototyping Hybrid Semiconducting-Superconducting Devices

M. Borovkov, Y. Schell, D. Sokolova +15

Planar germanium is currently the only semiconducting platform where high-coherence spin qubits and proximity-induced superconductivity have each been demonstrated. Recent research…

cond-mat.mes-hall2026

Granular aluminum induced superconductivity in germanium for hole spin-based hybrid devices

Giorgio Fabris, Paul Falthansl-Scheinecker, Devashish Shah +19

In superconductor-semiconductor hybrid structures, superconductivity and spin polarization are competing effects as magnetic fields break Cooper pairs. They can be combined using t…

cond-mat.mes-hall2018

Universal Frequency Dependence of the Hopping AC Conductance in p-Ge/GeSi Structures in the Integer Quantum Hall Effect Regime

I. L. Drichko, A. A. Dmitriev, V. A. Malysh +6

The hopping ac conductance, which is realized at the transverse conductance minima in the regime of the integer Hall effect, has been measured using a combination of acoustic and m…

cond-mat.mtrl-sci2016★ 21 cited

Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates

F. Pezzoli, A. Giorgioni, K. Gallacher +9

We address nonradiative recombination pathways by leveraging surface passivation and dislocation management in micron-scale arrays of Ge crystals grown on deeply patterned Si subst…

cond-mat.mtrl-sci2015★ 13 cited

Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates

E. Vitiello, M. Virgilio, A. Giorgioni +7

The circular polarization of direct gap emission of Ge is studied in optically-excited tensile-strained Ge-on-Si heterostructures as a function of doping and temperature. Owing to…

cond-mat.mtrl-sci2014

Spin photovoltaic cell

F. Bottegoni, M. Celebrano, M. Bollani +4

Spintronics, which aims at exploiting the spin degree of freedom of carriers inside electronic devices, has a huge potential for quantum computation and dissipationless interconnec…