activity
20152026
most citedHigh-yield fabrication of entangled photon emitters for hybrid quantum networking using high-temperature droplet epitaxy

61 citations · 132 across the 12 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

5 papers · 1 filter

cond-mat.mtrl-sci2026

Growth and characterization of planar hexagonal Ge on CdS

Andrea Besana, Veronica Regazzoni, Marco Faverzani +13

Hexagonal group-IV semiconductors have attracted increasing interest owing to their unconventional electronic and optical properties compared to the cubic diamond phase. However, t…

cond-mat.mtrl-sci2025

Formation of C-centers in Si-based systems by light ion irradiation

Carolina Crosta, Riccardo Nardin, Patrick Daoust +8

Atomic-scale crystal defects in Si are quantum-light sources offering tantalizing integration with existing photonic technologies. Yet, the controlled creation of near-infrared col…

cond-mat.mtrl-sci2017

Droplet Controlled Growth Dynamics in Plasma-Assisted Molecular Beam Epitaxy of In(Ga)N Materials

Mani Azadmand, Luca Barabani, Sergio Bietti +7

We investigate the effect of the formation of metal droplets on the growth dynamics of InGaN by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) at low temperatures (T = 450°C). We f…

cond-mat.mtrl-sci2016★ 21 cited

Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates

F. Pezzoli, A. Giorgioni, K. Gallacher +9

We address nonradiative recombination pathways by leveraging surface passivation and dislocation management in micron-scale arrays of Ge crystals grown on deeply patterned Si subst…

cond-mat.mtrl-sci2015★ 13 cited

Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates

E. Vitiello, M. Virgilio, A. Giorgioni +7

The circular polarization of direct gap emission of Ge is studied in optically-excited tensile-strained Ge-on-Si heterostructures as a function of doping and temperature. Owing to…