103 citations · 260 across the 6 of their papers we have counts for
7 papers
Optically reconfigurable polarized emission in Germanium
Sebastiano De Cesari, Roberto Bergamaschini, Elisa Vitiello +2
Light polarization can conveniently encode information. Yet, the ability to steer polarized optical fields is notably demanding but crucial to develop practical methods for data en…
Temperature-dependent photoluminescence characteristics of GeSn epitaxial layers
Fabio Pezzoli, Anna Giorgioni, David Patchett +1
GeSn epitaxial heterostructures are emerging as prominent candidates for the monolithic integration of light sources on Si substrates. Here we propose a judicious explanation for t…
Giant g factor tuning of long-lived electron spins in Ge
Anna Giorgioni, Stefano Paleari, Stefano Cecchi +5
Control of electron spin coherence via external fields is fundamental in spintronics. Its implementation demands a host material that accommodates the highly desirable but contrast…
Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates
F. Pezzoli, A. Giorgioni, K. Gallacher +9
We address nonradiative recombination pathways by leveraging surface passivation and dislocation management in micron-scale arrays of Ge crystals grown on deeply patterned Si subst…
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates
E. Vitiello, M. Virgilio, A. Giorgioni +7
The circular polarization of direct gap emission of Ge is studied in optically-excited tensile-strained Ge-on-Si heterostructures as a function of doping and temperature. Owing to…
Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence
F. Pezzoli, L. Qing, A. Giorgioni +4
Spin orientation of photoexcited carriers and their energy relaxation is investigated in bulk Ge by studying spin-polarized recombination across the direct band gap. The control ov…
Optical spin injection and spin lifetime in Ge heterostructures
F. Pezzoli, F. Bottegoni, D. Trivedi +9
We demonstrate optical orientation in Ge/SiGe quantum wells and study their spin properties. The ultrafast electron transfer from the center of the Brillouin zone to its edge allow…