Non-destructive Depth-Resolved Characterization of Residual Strain Fields in High Electron Mobility Transistors using Differential Aperture X-ray Microscopy

Darren C. Pagan, Md Abu Jafar Rasel, Rachel E. Lim +3

Localized residual stress and elastic strain concentrations in microelectronic devices often affect the electronic performance, resistance to thermomechanical damage, and, likely,…