14 citations · 15 across the 2 of their papers we have counts for
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cond-mat.mtrl-sci2016★ 14 cited
Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum well grown by gas source molecular beam epitaxy
Wenwu Pan, Liang Zhu, Liyao Zhang +6
InGaAs/GaAsBi/InGaAs quantum wells (QWs) were grown on GaAs substrates by gas source molecular beam epitaxy for realizing the type II band-edge line-up. Both type I and type II tra…
cond-mat.mtrl-sci2016★ 1 cited
The identification of the dominant donors in low temperature grown InPBi materials
G. N. Wei, D. Xing, Q. Feng +8
Combined with magnetotransport measurements and first-principles calculations, we systematically investigated the effects of Bi incorporation on the electrical properties of the un…