45 citations · 64 across the 4 of their papers we have counts for
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cond-mat.mtrl-sci2024★ 1 cited
Ferrimagnetic Heusler tunnel junctions with fast spin-transfer torque switching enabled by low magnetization
Chirag Garg, Panagiotis Ch. Filippou, Ikhtiar +10
Magnetic random access memory that uses magnetic tunnel junction memory cells is a high performance, non-volatile memory technology that goes beyond traditional charge-based memori…
cond-mat.mtrl-sci2016★ 17 cited
Butterfly Magnetoresistance, Quasi-2D Dirac Fermi Surfaces, and a Topological Phase Transition in ZrSiS
Mazhar N. Ali, Leslie M. Schoop, Chirag Garg +4
Magnetoresistance (MR), the change of a material's electrical resistance in response to an applied magnetic field, is a technologically important property that has been the topic o…