20 citations · 22 across the 2 of their papers we have counts for
5 papers · 1 filter
Fundamental Crystal Field Excitations in Magnetic Semiconductor SnO:Mn,Fe,Co,Ni
B. Leedahl, D. J. McCloskey, D. W. Boukhvalov +7
Directly measuring elementary electronic excitations in dopant metals is essential to understanding how they function as part of their host material. Through calculated crysta…
Atomic and electronic structure of graphene oxide/Cu interface
Danil W. Boukhvalov, Ernst Z. Kurmaev, Ewelina Urbańczyk +8
The results of X-ray photoemission (XPS) and valence bands spectroscopy, optically stimulated electron emission (OSEE) measurements and density functional theory based modeling of…
Stability of boron-doped graphene/copper interface: DFT, XPS and OSEE studies
D. W. Boukhvalov, I. S. Zhidkov, A. I. Kukharenko +4
Two different types of boron-doped graphene/copper interfaces synthesized using two different flow rates of Ar through the bubbler containing the boron source were studied. X-ray p…
Atomic and electronic structure of a copper/graphene interface as prepared and 1.5 years after
D. W. Boukhvalov, P. F. Bazylewski, A. I. Kukharenko +6
We report the results of X-ray spectroscopy and Raman measurements of as-prepared graphene on a high quality copper surface and the same materials after 1.5 years under different c…
Pleomorphic structural imperfections caused by pulsed Bi-implantation in the bulk and thin-film morphologies of TiO2
D. A. Zatsepin, D. W. Boukhvalov, E. Z. Kurmaev +3
The results of combined experimental and theoretical study of substitutional and clustering effects in Bi-doped TiO2 hosts (bulk and thin-film morphologies) are presented. Bi-dopin…