218 citations · 440 across the 7 of their papers we have counts for
7 papers
Semi-Classical Monte Carlo Simulation of Contact Geometry, Orientation, and Ideality on Nano-scale Si and III-V n-channel FinFETs in the Quasi-Ballistic Limit
Aqyan A. Bhatti, Dax M. Crum, Amith Valsaraj +2
The effects of contact geometry and ideality on InGaAs and Si nano-scale n-channel FinFET performance are studied using a quantum-corrected semi-classical Monte Carlo method. Illus…
Carrier Trapping by Oxygen Impurities in Molybdenum Diselenide
Ke Chen, Anupam Roy, Amritesh Rai +7
Understanding defect effect on carrier dynamics is essential for both fundamental physics and potential applications of transition metal dichalcogenides. Here, the phenomenon of ox…
Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe2 Heterostructures
G. William Burg, Nitin Prasad, Babak Fallahazad +8
We demonstrate gate-tunable resonant tunneling and negative differential resistance between two rotationally aligned bilayer graphene sheets separated by bilayer WSe2. We observe l…
DFT Simulations of Inter-Graphene-Layer Coupling with Rotationally Misaligned hBN Tunnel Barriers in Graphene/hBN/Graphene Tunnel FETs
Amithraj Valsaraj, Leonard F. Register, Emanuel Tutuc +1
Van der Waal's heterostrucutures allow for novel devices such as two-dimensional-to-two-dimensional tunnel devices, exemplified by interlayer tunnel FETs. These devices employ chan…
Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer by Amorphous Encapsulation
Amritesh Rai, Amithraj Valsaraj, Hema C. P. Movva +12
To reduce Schottky-barrier-induced contact and access resistance, and the impact of charged impurity and phonon scattering on mobility in devices based on 2D transition metal dicha…
Ensemble Monte Carlo for III-V and Si n-channel FinFETs considering non-equilibrium degenerate statistics and quantum-confined scattering
Dax M. Crum, Amithraj Valsaraj, John K. David +2
Particle-based ensemble semi-classical Monte Carlo (MC) methods employ quantum corrections (QCs) to address quantum confinement and degenerate carrier populations to model tomorrow…
Theoretical and experimental investigation of vacancy-based doping of monolayer MoS on oxide
Amithraj Valsaraj, Jiwon Chang, Amritesh Rai +2
Monolayer transition metal dichalcogenides are novel, gapped two-dimensional materials. Toward device applications, we consider MoS layers on dielectrics, in particular in this…