activity
20162025
most citedAnalysis of random telegraph noise in resistive memories: The case of unstable filaments

6 citations · 24 across the 14 of their papers we have counts for

collaborators

24 papers

cond-mat.mtrl-sci20251 cited

Resistance Switching Properties of Stoichiometric and Nitrogen Implanted Silicon Nitride Nanolayers on N and P-Type Si Substrates

A. E. Mavropoulis, P. Karakolis, N. Vasileiadis +6

This paper examines the resistive switching characteristics of LPCVD SiNx MNOS ReRAM cells on both heavily doped n- and p-type silicon substrates, focusing on the effects of nitrog…

quant-ph20251 cited

Interfacing Quantum Computing Systems with High-Performance Computing Systems: An Overview

Konstantinos Rallis, Ioannis Liliopoulos, Georgios D. Varsamis +4

The connection and eventual integration of High-Performance Computing (HPC) with Quantum Computing (QC) represents a transformative advancement in computational technology, promisi…

physics.app-ph20251 cited

Memristor Applications: Nanodevices Redefining Technological Landscapes

Nikolaos Vasileiadis, Georgios Ch Sirakoulis, Panagiotis Dimitrakis

A memristor, a two-terminal nanodevice, has garnered substantial attention in recent years due to its distinctive properties and versatile applications. These nanoscale components,…

physics.app-ph20251 cited

Synaptic MIS Silicon Nitride Resistance Switching Memory Cells on SOI Substrate

AE Mavropoulis, N Vasileiadis, P Normand +4

In this work, the comparison of resistive memory MIS single-cells without selector (1R), having silicon nitride as switching dielectric, fabricated on SOI and bulk Si wafers is dem…

physics.app-ph20254 cited

Random Telegraph Noise of MIS and MIOS Silicon Nitride memristors at different resistance states

N Vasileiadis, P Loukas, A Mavropoulis +4

Resistive memories (RRAM) are promising candidates for replacing present nonvolatile memories and realizing storage class memories; hence resistance switching devices are of partic…

physics.app-ph20254 cited

Novel crossbar array of silicon nitride resistive memories on SOI enables memristor rationed logic

N Vasileiadis, A Mavropoulis, I Karafyllidis +2

In this work, the fabrication of crossbar arrays of silicon nitride resistive memories on silicon-on-insulator substrate and their utilization to realize multi-rationed logic circu…