Classical-to-Quantum Crossover in 2D TMD Field-Effect Transistors: A First-Principles Study via Sub-10 nm Channel Scaling Beyond the Boltzmann Tyranny

Yu-Chang Chen, Chia-Yang Ling, Ken-Ming Lin

Scaling field-effect transistors (FETs) into the sub-10-nm regime fundamentally alters the transport mechanism, challenging long-standing design rules. This study investigates mono…