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physics.app-ph2020
Impact of body thickness and scattering on III-V triple heterojunction Fin-TFET modeled with atomistic mode space approximation
Chin-Yi Chen, Hesameddin Ilatikhameneh, Jun Z. Huang +2
The triple heterojunction TFET has been originally proposed to resolve TFET's low ON-current challenge. The carrier transport in such devices is complicated due to the presence of…
physics.app-ph2018★ 1 cited
Hole Mobility Model for Si Double-Gate Junctionless Transistors
Fan Chen, Kangliang Wei, Wei E. I. Sha +1
In this work, a physics based model is developed to calculate the hole mobility of ultra-thin-body double-gate junctionless transistors. Six-band Schrödinger equation an…