11 citations · 27 across the 5 of their papers we have counts for
5 papers
Characterization of p-stop isolation implants in silicon sensors using MOSFET structures
Thomas Bergauer, Suman Chatterjee, Marko Dragicevic +2
Metal-oxide-semiconductor field-effect transistor (MOSFET) test structures are investigated to characterize p-stop isolation implants between n-type electrodes in p-type silicon se…
Determination of the p-spray profile for n+p silicon sensors using a MOSFET
E. Fretwurst, E. Garutti, R. Klanner +3
The standard technique to electrically isolate the implants of segmented silicon sensors fabricated on high-ohmic -type silicon are -implants. Although the knowledge…
The influence of edge effects on the determination of the doping profile of silicon pad diodes
M. Hufschmidt, E. Fretwurst, E. Garutti +3
Edge effects for square p+n pad diodes with guard rings, fabricated on high-ohmic silicon, are investigated. Using capacitance-voltage measurements of two pad diodes with different…
Design and First Tests of a Radiation-Hard Pixel Sensor for the European X-Ray Free-Electron Laser
Joern Schwandt, Eckhart Fretwurst, Robert Klanner +2
The high intensity and high repetition rate of the European X-ray Free-Electron Laser, presently under construction in Hamburg, requires silicon sensors which can stand X-ray doses…
Study of X-ray radiation damage in the AGIPD sensor for the European XFEL
Jiaguo Zhang, Eckhart Fretwurst, Heinz Graafsma +3
The European X-ray Free Electron Laser (XFEL), currently being constructed in Hamburg and planning to be operational in 2017 for users, will deliver 27,000 fully coherent, high bri…