2 papers
physics.ins-det2026
Characterization of p-stop isolation implants in silicon sensors using MOSFET structures
Thomas Bergauer, Suman Chatterjee, Marko Dragicevic +2
Metal-oxide-semiconductor field-effect transistor (MOSFET) test structures are investigated to characterize p-stop isolation implants between n-type electrodes in p-type silicon se…
physics.ins-det2016
The influence of edge effects on the determination of the doping profile of silicon pad diodes
M. Hufschmidt, E. Fretwurst, E. Garutti +3
Edge effects for square p+n pad diodes with guard rings, fabricated on high-ohmic silicon, are investigated. Using capacitance-voltage measurements of two pad diodes with different…