13 citations · 13 across the 1 of their papers we have counts for
2 papers
cond-mat.mes-hall2016
Highly Non-linear and Reliable Amorphous Silicon Based Back-to-Back Schottky Diode as Selector Device for Large Scale RRAM Arrays
Cheng-Chih Hsieh, Yao-Feng Chang, Ying-Chen Chen +3
In this work we present silicon process compatible, stable and reliable (cycles), high non-linearity ratio at half-read voltage (), high speed () l…
cond-mat.mes-hall2009★ 13 cited
Scaling Properties of Ge-SixGe1-x Core-Shell Nanowire Field Effect Transistors
Junghyo Nah, En-Shao Liu, Kamran M. Varahramyan +3
We demonstrate the fabrication of high-performance Ge-SixGe1-x core-shell nanowire field-effect transistors with highly doped source and drain, and systematically investigate their…