most citedSequential directional deposition of one-sided (In,Ga)N shells on GaN nanowires by molecular beam epitaxy

4 citations · 6 across the 2 of their papers we have counts for

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cond-mat.mtrl-sci2023★ 4 cited

Sequential directional deposition of one-sided (In,Ga)N shells on GaN nanowires by molecular beam epitaxy

David van Treeck, Jonas Lähnemann, Guanhui Gao +3

Capitalizing on the directed nature of the atomic fluxes in molecular beam epitaxy, we propose and demonstrate the sequential directional deposition of lateral (In,Ga)N shells on G…

cond-mat.mtrl-sci2016★ 2 cited

Hydride Vapor Phase Epitaxy of GaN on Silicon Covered by Nanostructures

U. Jahn, M. Musolino, J. Lähnemann +8

Several ten m GaN have been deposited on a silicon substrate using a two-step hydride vapor phase epitaxy (HVPE) process. The substrates have been covered by AlN layers and GaN…