activity
20122024
most citedThe Effect of Intrinsic Crumpling on the Mechanics of Free-Standing Graphene

258 citations · 453 across the 6 of their papers we have counts for

collaborators

6 papers

cs.AI2024

RuAG: Learned-rule-augmented Generation for Large Language Models

Yudi Zhang, Pei Xiao, Lu Wang +11

In-context learning (ICL) and Retrieval-Augmented Generation (RAG) have gained attention for their ability to enhance LLMs' reasoning by incorporating external knowledge but suffer…

cond-mat.mtrl-sci2016

Variability of structural and electronic properties of bulk and monolayer Si2Te3

Yevgeniy Puzyrev, X. Shen, C. Combs +1

Since the emergence of monolayer graphene as a promising two-dimensional material, many other monolayer and few-layer materials have been investigated extensively. An experimental…

cond-mat.mes-hall2015★ 258 cited

The Effect of Intrinsic Crumpling on the Mechanics of Free-Standing Graphene

Ryan J. T. Nicholl, Hiram J. Conley, Nickolay V. Lavrik +5

Free-standing graphene is inherently crumpled in the out-of-plane direction due to dynamic flexural phonons and static wrinkling. We explore the consequences of this crumpling on t…

cond-mat.mtrl-sci2015★ 38 cited

Theory of inelastic multiphonon scattering and carrier capture by defects in semiconductors. Application to capture cross sections

Georgios D. Barmparis, Yevgeniy S. Puzyrev, X. -G. Zhang +1

Inelastic scattering and carrier capture by defects in semiconductors are the primary causes of hot-electron-mediated degradation of power devices, which holds up their commercial…

cond-mat.str-el2015★ 6 cited

High On/Off Ratio Memristive Switching of Manganite-Cuprate Bilayer by Interfacial Magnetoelectricity

Xiao Shen, Timothy J. Pennycook, David Hernandez-Martin +7

Memristive switching serves as the basis for a new generation of electronic devices. Memristors are two-terminal devices in which the current is turned on and off by redistributing…

cond-mat.mes-hall2012★ 151 cited

Probing charge scattering mechanisms in suspended graphene by varying its dielectric environment

A. K. M. Newaz, Yevgeniy S. Puzyrev, Bin Wang +2

Graphene with high carrier mobility μ is required both for graphene-based electronic devices and for the investigation of the fundamental properties of graphene's Dirac fermions. I…